FDMS0309AS
- Mfr.Part #
- FDMS0309AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 1,918
- In Stock :
- 1,918
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PDSO-F5
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Weight :
- 68.1mg
- Number of Channels :
- 1
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 3.7 ns
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- MO-240AA
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Factory Lead Time :
- 18 Weeks
- Rise Time :
- 4.5ns
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 49A Tc
- Turn On Delay Time :
- 11 ns
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Turn-Off Delay Time :
- 29 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 15V
- Continuous Drain Current (ID) :
- 49A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Series :
- PowerTrench®, SyncFET™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Avalanche Energy Rating (Eas) :
- 66 mJ
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Flat
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 21A, 10V
- Datasheets
- FDMS0309AS
FDMS0309AS Documents

N-Channel Tape & Reel (TR) 3.5m Ω @ 21A, 10V ±20V 3000pF @ 15V 47nC @ 10V 8-PowerTDFN
The FDMS0309AS has been designed to minimize losses in power conversion application. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS0309AS Features
MSL1 Robust Package Design
100% UIL tested
RoHS Compliant
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced package and silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
FDMS0309AS Applications
Synchrounous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
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