FDMS0309AS
- Mfr.Part #
- FDMS0309AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 1,918
- In Stock :
- 1,918
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- Continuous Drain Current (ID) :
- 49A
- JESD-30 Code :
- R-PDSO-F5
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 15V
- Series :
- PowerTrench®, SyncFET™
- Weight :
- 68.1mg
- Factory Lead Time :
- 18 Weeks
- Turn On Delay Time :
- 11 ns
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Number of Terminations :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 49A Tc
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 30V
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Avalanche Energy Rating (Eas) :
- 66 mJ
- Reach Compliance Code :
- not_compliant
- Fall Time (Typ) :
- 3.7 ns
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Rise Time :
- 4.5ns
- Package / Case :
- 8-PowerTDFN
- Turn-Off Delay Time :
- 29 ns
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 21A, 10V
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JEDEC-95 Code :
- MO-240AA
- Power Dissipation :
- 2.5W
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Number of Pins :
- 8
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Datasheets
- FDMS0309AS

N-Channel Tape & Reel (TR) 3.5m Ω @ 21A, 10V ±20V 3000pF @ 15V 47nC @ 10V 8-PowerTDFN
The FDMS0309AS has been designed to minimize losses in power conversion application. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS0309AS Features
MSL1 Robust Package Design
100% UIL tested
RoHS Compliant
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced package and silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
FDMS0309AS Applications
Synchrounous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
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