FDMC6890NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

4A

Voltage - Rated DC :

20V

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Transistor Element Material :

SILICON

Width :

3mm

Pulsed Drain Current-Max (IDM) :

10A

Number of Pins :

6

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

12V

Rise Time :

12ns

Height :

750μm

Current Rating :

4A

Vgs(th) (Max) @ Id :

2V @ 250μA

Weight :

165.33333mg

RoHS Status :

ROHS3 Compliant

Power Dissipation :

1.92W

Turn On Delay Time :

4 ns

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Element Configuration :

Dual

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Length :

3mm

ECCN Code :

EAR99

Turn-Off Delay Time :

7 ns

Number of Elements :

2

Mounting Type :

Surface Mount

Pbfree Code :

yes

JESD-609 Code :

e4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

12 ns

Input Capacitance (Ciss) (Max) @ Vds :

270pF @ 10V

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

3.4nC @ 4.5V

Max Power Dissipation :

1.92W

Power - Max :

1.92W 1.78W

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

4A

Package / Case :

6-WDFN Exposed Pad

Rds On (Max) @ Id, Vgs :

68m Ω @ 4A, 4.5V

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.15Ohm

FET Type :

2 N-Channel (Dual)