FDI9406

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 80A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

138nC @ 10V

FET Type :

N-Channel

Turn-Off Delay Time :

50 ns

JESD-609 Code :

e3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

176W

Packaging :

Tube

Pbfree Code :

yes

Number of Terminations :

3

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

176W Tj

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

40V

Weight :

2.084g

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn)

Drain-source On Resistance-Max :

0.0022Ohm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

20 ns

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Mounting Type :

Through Hole

Element Configuration :

Single

Turn On Delay Time :

28 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

48ns

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

7710pF @ 25V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Continuous Drain Current (ID) :

110A

Series :

Automotive, AEC-Q101, PowerTrench®

JEDEC-95 Code :

TO-262AB

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Number of Pins :

3