FDI025N06

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Mfr.Part #
FDI025N06
Manufacturer
Fairchild Semiconductor
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 60V 265A I2PAK
Stock
29,087
In Stock :
29,087

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Avalanche Energy Rating (Eas) :
2531 mJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Through Hole
DS Breakdown Voltage-Min :
60V
Series :
PowerTrench®
Transistor Application :
SWITCHING
Qualification Status :
COMMERCIAL
Pin Count :
3
Rds On (Max) @ Id, Vgs :
2.5m Ω @ 75A, 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Elements :
1
Packaging :
Tube
Terminal Position :
Single
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Drain-source On Resistance-Max :
0.0025Ohm
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
3
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
JESD-30 Code :
R-PSIP-T3
Drain Current-Max (Abs) (ID) :
120A
Current - Continuous Drain (Id) @ 25°C :
265A Tc
Vgs (Max) :
±20V
Terminal Finish :
MATTE TIN
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
395W Tc
Drain to Source Voltage (Vdss) :
60V
Input Capacitance (Ciss) (Max) @ Vds :
14.885pF @ 25V
FET Type :
N-Channel
Surface Mount :
No
Gate Charge (Qg) (Max) @ Vgs :
226nC @ 10V
Pulsed Drain Current-Max (IDM) :
1060A
Datasheets
FDI025N06
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDI025N06 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, FDI025N06 pinout, FDI025N06 datasheet PDF, FDI025N06 amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDI025N06 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDI025N06


N-Channel Tube 2.5m Ω @ 75A, 10V ±20V 14.885pF @ 25V 226nC @ 10V 60V TO-262-3 Long Leads, I2Pak, TO-262AA

FDI025N06 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 2531 mJ.A device's maximal input capacitance is 14.885pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 120A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 1060A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

FDI025N06 Features


the avalanche energy rating (Eas) is 2531 mJ
based on its rated peak drain current 1060A.
a 60V drain to source voltage (Vdss)


FDI025N06 Applications


There are a lot of Rochester Electronics, LLC
FDI025N06 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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