FDI025N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

14.885pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

JESD-609 Code :

e3

Pin Count :

3

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

1060A

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

265A Tc

Terminal Position :

Single

Number of Terminations :

3

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

226nC @ 10V

Drain-source On Resistance-Max :

0.0025Ohm

Drain Current-Max (Abs) (ID) :

120A

Vgs (Max) :

±20V

Power Dissipation-Max :

395W Tc

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 75A, 10V

DS Breakdown Voltage-Min :

60V

Avalanche Energy Rating (Eas) :

2531 mJ