FDD8N50NZTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

850m Ω @ 3.25A, 10V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

6.5A

Transistor Application :

SWITCHING

Height :

2.39mm

DS Breakdown Voltage-Min :

500V

Vgs (Max) :

±25V

Published :

2004

Transistor Element Material :

SILICON

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-252AA

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Power Dissipation :

90W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Mount :

Surface Mount

Additional Feature :

ESD PROTECTED

Terminal Form :

Gull wing

Power Dissipation-Max :

90W Tc

Turn-Off Delay Time :

43 ns

Series :

UniFET-II™

Drain to Source Voltage (Vdss) :

500V

Pulsed Drain Current-Max (IDM) :

26A

Turn On Delay Time :

17 ns

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Weight :

260.37mg

FET Type :

N-Channel

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

287 mJ

Fall Time (Typ) :

27 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Factory Lead Time :

6 Weeks

Width :

6.22mm

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.85Ohm

Current - Continuous Drain (Id) @ 25°C :

6.5A Tc

Length :

6.73mm

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Rise Time :

34ns

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

735pF @ 25V

Number of Elements :

1