FDD8445
- Mfr.Part #
- FDD8445
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 70A TO252AA
- Stock
- 4,950
- In Stock :
- 4,950
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Threshold Voltage :
- 2.8V
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Continuous Drain Current (ID) :
- 70A
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 79W Tc
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- PowerTrench®
- Length :
- 6.73mm
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-252AA
- Number of Elements :
- 1
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2001
- Voltage :
- 40V
- Reverse Recovery Time :
- 39 ns
- REACH SVHC :
- No SVHC
- Current :
- 50A
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 8.7m Ω @ 50A, 10V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4050pF @ 25V
- Contact Plating :
- Tin
- Turn On Delay Time :
- 10 ns
- Drain to Source Breakdown Voltage :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 59nC @ 10V
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 82ns
- Pbfree Code :
- yes
- Height :
- 2.39mm
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 9.6 ns
- Width :
- 6.22mm
- Nominal Vgs :
- 2.8 V
- Dual Supply Voltage :
- 40V
- Resistance :
- 8.7mOhm
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 26 ns
- Power Dissipation :
- 79W
- Termination :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Datasheets
- FDD8445
FDD8445 Documents

N-Channel Tape & Reel (TR) 8.7m Ω @ 50A, 10V ±20V 4050pF @ 25V 59nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8445 Description
The N-channel MOSFET FDD8445 is manufactured using on Semiconductor's advanced PowerTritch process, which is tailor-made to minimize on-resistance while maintaining excellent switching performance.
FDD8445 Features
RDS(ON)=6.7mΩ(Typ),VGs=10V,ID=50A
■Qg(10)=45nC(Typ),VGs=10V
.Low Miller Charge
■Low Qrr Body Diode
=UIS Capability(Single Pulse/ Repetitive Pulse)
RoHS Compliant
FDD8445 Applications
Power train Management
Electronic Transmission
IDistributed Power Architecture and VRMs
Primary Switch for 12V Systems
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