FDD8882

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Power Dissipation-Max :

55W Tc

Published :

2004

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

12.6A Ta 55A Tc

JESD-30 Code :

R-PSSO-G2

Turn On Delay Time :

8 ns

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

ECCN Code :

EAR99

Length :

6.73mm

Factory Lead Time :

10 Weeks

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mount :

Surface Mount

Number of Pins :

3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 35A, 10V

Power Dissipation :

55W

Rise Time :

82ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

FET Type :

N-Channel

Height :

2.39mm

RoHS Status :

ROHS3 Compliant

Contact Plating :

Tin

Width :

6.22mm

Fall Time (Typ) :

25 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 15V

Series :

PowerTrench®

Case Connection :

DRAIN

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Number of Terminations :

2

Continuous Drain Current (ID) :

55A

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

40 ns

Current Rating :

55A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

260.37mg

Terminal Form :

Gull wing