FDD8880

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Fall Time (Typ) :

32 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.73mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

Rise Time :

91ns

JESD-30 Code :

R-PSSO-G2

Contact Plating :

Tin

Mount :

Surface Mount

Case Connection :

DRAIN

Voltage - Rated DC :

30V

Weight :

260.37mg

Radiation Hardening :

No

Current Rating :

58A

Height :

2.39mm

Element Configuration :

Single

Factory Lead Time :

10 Weeks

Number of Pins :

3

Number of Elements :

1

ECCN Code :

EAR99

Turn-Off Delay Time :

38 ns

Rds On (Max) @ Id, Vgs :

9m Ω @ 35A, 10V

FET Type :

N-Channel

Resistance :

9mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 15V

Width :

6.22mm

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

13A Ta 58A Tc

Power Dissipation :

55W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

55W Tc

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Lead Free :

Lead Free

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-609 Code :

e3

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

2.5V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

58A

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Published :

2004

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

8 ns