FDD8878

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Height :

2.39mm

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Rise Time :

79ns

Continuous Drain Current (ID) :

40A

Element Configuration :

Single

Current Rating :

40A

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Avalanche Energy Rating (Eas) :

25 mJ

JEDEC-95 Code :

TO-252AA

Length :

6.73mm

FET Type :

N-Channel

Transistor Application :

SWITCHING

Pbfree Code :

yes

Transistor Element Material :

SILICON

Turn-Off Delay Time :

38 ns

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 15V

Threshold Voltage :

1.2V

REACH SVHC :

No SVHC

Contact Plating :

Tin

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

15m Ω @ 35A, 10V

Power Dissipation-Max :

40W Tc

ECCN Code :

EAR99

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn On Delay Time :

7 ns

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Fall Time (Typ) :

27 ns

Mount :

Surface Mount

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Weight :

260.37mg

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

6.22mm

Current - Continuous Drain (Id) @ 25°C :

11A Ta 40A Tc

Drain to Source Breakdown Voltage :

30V

Power Dissipation :

40W

Lead Free :

Lead Free

Number of Elements :

1

Radiation Hardening :

No

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Published :

2005

Case Connection :

DRAIN

Vgs (Max) :

±20V

Factory Lead Time :

10 Weeks