FDD8878
- Mfr.Part #
- FDD8878
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A/40A TO252AA
- Stock
- 10,906
- In Stock :
- 10,906
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- PowerTrench®
- Case Connection :
- DRAIN
- Current Rating :
- 40A
- Power Dissipation-Max :
- 40W Tc
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Weight :
- 260.37mg
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2005
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- JEDEC-95 Code :
- TO-252AA
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Temperature :
- -55°C~175°C TJ
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Factory Lead Time :
- 10 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 880pF @ 15V
- Power Dissipation :
- 40W
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Width :
- 6.22mm
- Threshold Voltage :
- 1.2V
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 35A, 10V
- Turn-Off Delay Time :
- 38 ns
- Avalanche Energy Rating (Eas) :
- 25 mJ
- Terminal Form :
- Gull wing
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 30V
- Rise Time :
- 79ns
- JESD-30 Code :
- R-PSSO-G2
- Fall Time (Typ) :
- 27 ns
- Continuous Drain Current (ID) :
- 40A
- Length :
- 6.73mm
- Turn On Delay Time :
- 7 ns
- Height :
- 2.39mm
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 40A Tc
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±20V
- Datasheets
- FDD8878

N-Channel Tape & Reel (TR) 15m Ω @ 35A, 10V ±20V 880pF @ 15V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8878 Description
FDD8878 N-Channel MOSFET is tailored to minimize the on-state resistance and yet maintain superior switching performance. FDD8878 datasheet can remove additional components and improve system reliability in certain applications that require performance improvement of the body diode. FDD8878 ON Semiconductor is used in DC/DC converters, synchronous or conventional switching PWM controllers.
FDD8878 Features
High-performance technology
Low RDS(ON)
Low gate charge
High power and current
Handling capability
FDD8878 Applications
DC/DC converters
PWM controllers
Synchronous PWM controllers
conventional switching PWM controllers
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