FDD8870
- Mfr.Part #
- FDD8870
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A/160A TO252AA
- Stock
- 42,474
- In Stock :
- 42,474
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 10 Weeks
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 35A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Resistance :
- 4.4mOhm
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- TO-252AA
- Weight :
- 260.37mg
- Input Capacitance (Ciss) (Max) @ Vds :
- 5160pF @ 15V
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 160A Tc
- FET Type :
- N-Channel
- Published :
- 2004
- Drain to Source Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- REACH SVHC :
- No SVHC
- Number of Channels :
- 1
- Number of Pins :
- 3
- Voltage - Rated DC :
- 30V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Terminations :
- 2
- Length :
- 6.73mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 9 ns
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 690 mJ
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 160W Tc
- Max Junction Temperature (Tj) :
- 175°C
- Fall Time (Typ) :
- 42 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 160W
- Rise Time :
- 83ns
- Turn-Off Delay Time :
- 83 ns
- Series :
- PowerTrench®
- Width :
- 6.22mm
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Threshold Voltage :
- 2.5V
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Height :
- 2.517mm
- Current Rating :
- 160A
- Continuous Drain Current (ID) :
- 160A
- Number of Elements :
- 1
- Datasheets
- FDD8870

N-Channel Tape & Reel (TR) 3.9m Ω @ 35A, 10V ±20V 5160pF @ 15V 118nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8870 Description
FDD8870 is a 30v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDD8870 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The onsemi FDD8870 has been optimized for low gate charge, low rDS(ON), and fast switching speed.
FDD8870 Features
-
RDS(ON) = 3.9 mΩ, VGS = 10V, ID = 35V
-
RDS(ON) = 4.4 mΩ, VGS = 4.5V, ID = 35V
-
High-performance trench technology for extremely low RDS(ON)
-
Low gate charge
-
High power and current handling capability
FDD8870 Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
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