FDD8780

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Number of Elements :

1

Fall Time (Typ) :

24 ns

Rise Time :

9ns

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 35A, 10V

Additional Feature :

AVALANCHE RATED

Voltage - Rated DC :

25V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

50W Tc

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Turn On Delay Time :

7 ns

REACH SVHC :

No SVHC

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Power Dissipation :

50W

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.39mm

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

60A

Series :

PowerTrench®

Current Rating :

35A

Transistor Element Material :

SILICON

Published :

2006

Number of Pins :

3

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

6.22mm

Packaging :

Tape and Reel (TR)

Resistance :

8.5mOhm

JEDEC-95 Code :

TO-252AA

Lead Free :

Lead Free

Turn-Off Delay Time :

43 ns

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1440pF @ 13V

Length :

6.73mm

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

224A

Transistor Application :

SWITCHING

Weight :

260.37mg

Factory Lead Time :

10 Weeks

Element Configuration :

Single

Drain to Source Breakdown Voltage :

25V

Radiation Hardening :

No

Threshold Voltage :

1.8V

Continuous Drain Current (ID) :

35A