FDD8778
- Mfr.Part #
- FDD8778
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 35A TO252AA
- Stock
- 22,646
- In Stock :
- 22,646
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 6 ns
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Power Dissipation :
- 39W
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 6.22mm
- Number of Terminations :
- 2
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Rise Time :
- 22ns
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-252AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Length :
- 6.73mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 845pF @ 13V
- Gate Charge (Qg) (Max) @ Vgs :
- 18nC @ 10V
- Weight :
- 260.37mg
- Height :
- 2.39mm
- Rds On (Max) @ Id, Vgs :
- 14m Ω @ 35A, 10V
- JESD-609 Code :
- e3
- Threshold Voltage :
- 1.5V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Fall Time (Typ) :
- 32 ns
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Gate to Source Voltage (Vgs) :
- 20V
- Current Rating :
- 35A
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 39W Tc
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 10 Weeks
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 24 mJ
- Voltage - Rated DC :
- 25V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 35A
- Resistance :
- 14mOhm
- Series :
- PowerTrench®
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 25V
- FET Type :
- N-Channel
- Published :
- 2006
- Nominal Vgs :
- 1.5 V
- Turn-Off Delay Time :
- 43 ns
- Datasheets
- FDD8778

N-Channel Tape & Reel (TR) 14m Ω @ 35A, 10V ±20V 845pF @ 13V 18nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8778 Description
This N-Channel MOSFET has been designed specificallyto improve the overall efficiency of DC/DC converters usingeither synchronous orconventional switching PWMcontrollers. It has been optimized for low gate charge,low「DS(ony and fast switching speed.
FDD8778 Features
DC-DC for Desktop Computers and Servers
VRM for lntermediate Bus Architecture
FDD8778 Applications
Max rDs(on)= 14.0m at Vcs= 10V, Ip = 35A
Max rDs(on)= 21.0m at Vcs= 4.5V,ID= 33A
Low gate charge: og(ToT)= 12.6nC(Typ),Vcs = 10V
Low gate resistance
RoHS compliant
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