FDD8770

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Mfr.Part #
FDD8770
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 25V 35A TO252AA
Stock
70,404
In Stock :
70,404

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Length :
6.35mm
Operating Temperature :
-55°C~175°C TJ
Terminal Finish :
Tin (Sn)
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
35A Tc
Power Dissipation-Max :
115W Tc
ECCN Code :
EAR99
Current Rating :
35A
Threshold Voltage :
1.6V
Drain to Source Breakdown Voltage :
25V
Power Dissipation :
115W
Input Capacitance (Ciss) (Max) @ Vds :
3720pF @ 13V
Turn-Off Delay Time :
49 ns
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Nominal Vgs :
1.6 V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Series :
PowerTrench®
Pbfree Code :
yes
Rise Time :
12ns
Fall Time (Typ) :
25 ns
Resistance :
4mOhm
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
73nC @ 10V
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
407A
Rds On (Max) @ Id, Vgs :
4m Ω @ 35A, 10V
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Transistor Application :
SWITCHING
Number of Elements :
1
Radiation Hardening :
No
Factory Lead Time :
10 Weeks
Height :
6.35mm
Case Connection :
DRAIN
Turn On Delay Time :
10 ns
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
Width :
6.35mm
FET Type :
N-Channel
Continuous Drain Current (ID) :
35A
JEDEC-95 Code :
TO-252AA
JESD-30 Code :
R-PSSO-G2
Mount :
Surface Mount
JESD-609 Code :
e3
Weight :
260.37mg
Number of Terminations :
2
Voltage - Rated DC :
25V
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD8770 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, FDD8770 pinout, FDD8770 datasheet PDF, FDD8770 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD8770 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD8770


N-Channel Tape & Reel (TR) 4m Ω @ 35A, 10V ±20V 3720pF @ 13V 73nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD8770 Description


FDD8770 is a 25v N-Channel PowerTrench? MOSFET. This onsemi N-Channel MOSFET FDD8770 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDD8770 has been optimized for low gate charge, low rDS(on), and fast switching speed. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD8770 is in the DPAK-3 package with 115W power dissipation.



FDD8770 Features


  • Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A

  • Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A

  • Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V

  • Low gate resistance

  • RoHS Compliant



FDD8770 Applications


  • Vcore DC-DC for Desktop Computers and Servers

  • VRM for Intermediate Bus Architecture


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