FDD8770
- Mfr.Part #
- FDD8770
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 35A TO252AA
- Stock
- 70,404
- In Stock :
- 70,404
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 6.35mm
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 35A Tc
- Power Dissipation-Max :
- 115W Tc
- ECCN Code :
- EAR99
- Current Rating :
- 35A
- Threshold Voltage :
- 1.6V
- Drain to Source Breakdown Voltage :
- 25V
- Power Dissipation :
- 115W
- Input Capacitance (Ciss) (Max) @ Vds :
- 3720pF @ 13V
- Turn-Off Delay Time :
- 49 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Nominal Vgs :
- 1.6 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- PowerTrench®
- Pbfree Code :
- yes
- Rise Time :
- 12ns
- Fall Time (Typ) :
- 25 ns
- Resistance :
- 4mOhm
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 407A
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 35A, 10V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Factory Lead Time :
- 10 Weeks
- Height :
- 6.35mm
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 10 ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Width :
- 6.35mm
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 35A
- JEDEC-95 Code :
- TO-252AA
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Weight :
- 260.37mg
- Number of Terminations :
- 2
- Voltage - Rated DC :
- 25V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- FDD8770
FDD8770 Documents

N-Channel Tape & Reel (TR) 4m Ω @ 35A, 10V ±20V 3720pF @ 13V 73nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD8770 Description
FDD8770 is a 25v N-Channel PowerTrench? MOSFET. This onsemi N-Channel MOSFET FDD8770 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDD8770 has been optimized for low gate charge, low rDS(on), and fast switching speed. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD8770 is in the DPAK-3 package with 115W power dissipation.
FDD8770 Features
-
Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 35A
-
Max rDS(on) = 5.5mΩ at VGS = 4.5V, ID = 35A
-
Low gate charge: Qg(10) = 52nC(Typ), VGS = 10V
-
Low gate resistance
-
RoHS Compliant
FDD8770 Applications
-
Vcore DC-DC for Desktop Computers and Servers
-
VRM for Intermediate Bus Architecture
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