FDD8770

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-252AA

Length :

6.35mm

Rds On (Max) @ Id, Vgs :

4m Ω @ 35A, 10V

Nominal Vgs :

1.6 V

JESD-609 Code :

e3

Radiation Hardening :

No

Threshold Voltage :

1.6V

Number of Pins :

3

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 13V

Mounting Type :

Surface Mount

Resistance :

4mOhm

Voltage - Rated DC :

25V

Power Dissipation :

115W

Width :

6.35mm

Number of Terminations :

2

Element Configuration :

Single

Series :

PowerTrench®

Pbfree Code :

yes

Weight :

260.37mg

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

35A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

25 ns

Vgs (Max) :

±20V

Current Rating :

35A

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

407A

Height :

6.35mm

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

25V

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Power Dissipation-Max :

115W Tc

REACH SVHC :

No SVHC

Turn-Off Delay Time :

49 ns

Transistor Element Material :

SILICON

Number of Elements :

1

Rise Time :

12ns