FDD86540

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.22mm

Drain to Source Breakdown Voltage :

60V

Mount :

Surface Mount

Weight :

260.37mg

Height :

2.39mm

Power Dissipation :

127W

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

15ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

21.5A Ta 50A Tc

Power Dissipation-Max :

3.1W Ta 127W Tc

Case Connection :

DRAIN

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

6340pF @ 30V

Transistor Element Material :

SILICON

Number of Pins :

3

JESD-609 Code :

e3

ECCN Code :

EAR99

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Drain Current-Max (Abs) (ID) :

50A

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

26 ns

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

228 mJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Turn-Off Delay Time :

31 ns

Vgs (Max) :

±20V

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

21.5A

Fall Time (Typ) :

6.9 ns

Rds On (Max) @ Id, Vgs :

4.1m Ω @ 21.5A, 10V

Series :

PowerTrench®

Factory Lead Time :

8 Weeks

Length :

6.73mm