FDD86326

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Mfr.Part #
FDD86326
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 80V 8A/37A DPAK
Stock
3,675
In Stock :
3,675

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
260.37mg
Operating Mode :
ENHANCEMENT MODE
REACH SVHC :
No SVHC
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Turn On Delay Time :
7.6 ns
Continuous Drain Current (ID) :
42A
Rise Time :
3ns
Width :
6.22mm
Published :
2010
Rds On (Max) @ Id, Vgs :
23m Ω @ 8A, 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
Power Dissipation :
62W
Input Capacitance (Ciss) (Max) @ Vds :
1035pF @ 50V
ECCN Code :
EAR99
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Number of Terminations :
2
Pulsed Drain Current-Max (IDM) :
40A
JESD-609 Code :
e3
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
80V
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Nominal Vgs :
3.1 V
Vgs (Max) :
±20V
Transistor Element Material :
SILICON
Mount :
Surface Mount
Length :
6.73mm
Power Dissipation-Max :
3.1W Ta 62W Tc
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
13.4 ns
Fall Time (Typ) :
2.9 ns
Drain Current-Max (Abs) (ID) :
8A
Vgs(th) (Max) @ Id :
4V @ 250µA
Terminal Finish :
Tin (Sn)
Mounting Type :
Surface Mount
Threshold Voltage :
3.1V
Number of Elements :
1
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
8 Weeks
Height :
2.39mm
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25°C :
8A Ta 37A Tc
Series :
PowerTrench®
Terminal Form :
Gull wing
Radiation Hardening :
No
Datasheets
FDD86326
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD86326 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD86326 pinout, FDD86326 datasheet PDF, FDD86326 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD86326 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD86326


N-Channel Tape & Reel (TR) 23m Ω @ 8A, 10V ±20V 1035pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD86326 Description


FDD86326 is a type of N-Channel MOSFET. This N-Channel MOSFET is produced using an advanced Power Trench process that has been optimized for DS, switching performance and ruggedness. It has the following characteristics: Shielded Gate MOSFET Technology, High performance trench technology for extremely low DS(on), Fast switching speed.


FDD86326 Features


Shielded Gate MOSFET Technology
High performance trench technology for extremely low DS(on)
Fast switching speed
100% UIL tested
RoHS Compliant


FDD86326 Applications

DC- DC Conversion
DS
Switching
Ruggedness
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