FDD86326
- Mfr.Part #
- FDD86326
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 8A/37A DPAK
- Stock
- 3,675
- In Stock :
- 3,675
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 260.37mg
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Turn On Delay Time :
- 7.6 ns
- Continuous Drain Current (ID) :
- 42A
- Rise Time :
- 3ns
- Width :
- 6.22mm
- Published :
- 2010
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 8A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Power Dissipation :
- 62W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1035pF @ 50V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Number of Terminations :
- 2
- Pulsed Drain Current-Max (IDM) :
- 40A
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 80V
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Nominal Vgs :
- 3.1 V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Length :
- 6.73mm
- Power Dissipation-Max :
- 3.1W Ta 62W Tc
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 13.4 ns
- Fall Time (Typ) :
- 2.9 ns
- Drain Current-Max (Abs) (ID) :
- 8A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 3.1V
- Number of Elements :
- 1
- JESD-30 Code :
- R-PSSO-G2
- Factory Lead Time :
- 8 Weeks
- Height :
- 2.39mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta 37A Tc
- Series :
- PowerTrench®
- Terminal Form :
- Gull wing
- Radiation Hardening :
- No
- Datasheets
- FDD86326

N-Channel Tape & Reel (TR) 23m Ω @ 8A, 10V ±20V 1035pF @ 50V 19nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86326 is a type of N-Channel MOSFET. This N-Channel MOSFET is produced using an advanced Power Trench process that has been optimized for DS, switching performance and ruggedness. It has the following characteristics: Shielded Gate MOSFET Technology, High performance trench technology for extremely low DS(on), Fast switching speed.
FDD86326 Features
Shielded Gate MOSFET Technology
High performance trench technology for extremely low DS(on)
Fast switching speed
100% UIL tested
RoHS Compliant
FDD86326 Applications
DC- DC Conversion
DS
Switching
Ruggedness
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