FDD86250

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

20 ns

FET Type :

N-Channel

Number of Pins :

3

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Length :

6.73mm

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

8A Ta 50A Tc

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Power Dissipation :

3.1W

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

45mOhm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Contact Plating :

Tin

Published :

2017

Drain to Source Breakdown Voltage :

150V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Number of Channels :

1

Fall Time (Typ) :

4 ns

Continuous Drain Current (ID) :

8A

Weight :

260.37mg

Pbfree Code :

yes

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

22m Ω @ 8A, 10V

Drain Current-Max (Abs) (ID) :

8A

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

40A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Radiation Hardening :

No

Number of Elements :

1

Power Dissipation-Max :

3.1W Ta 132W Tc

Turn On Delay Time :

11.2 ns

Terminal Form :

Gull wing

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Series :

PowerTrench®

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Input Capacitance (Ciss) (Max) @ Vds :

2110pF @ 75V

Vgs (Max) :

±20V

Threshold Voltage :

2.9V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Rise Time :

3.7ns

Width :

6.22mm

Height :

2.517mm