FDD86250
- Mfr.Part #
- FDD86250
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 8A/50A DPAK
- Stock
- 64,530
- In Stock :
- 64,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- 150V
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Threshold Voltage :
- 2.9V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 8A, 10V
- RoHS Status :
- ROHS3 Compliant
- Max Junction Temperature (Tj) :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 8A Ta 50A Tc
- Element Configuration :
- Single
- Turn On Delay Time :
- 11.2 ns
- Power Dissipation-Max :
- 3.1W Ta 132W Tc
- Rise Time :
- 3.7ns
- Height :
- 2.517mm
- Length :
- 6.73mm
- Factory Lead Time :
- 8 Weeks
- Resistance :
- 45mOhm
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 8A
- Input Capacitance (Ciss) (Max) @ Vds :
- 2110pF @ 75V
- Number of Channels :
- 1
- Published :
- 2017
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pulsed Drain Current-Max (IDM) :
- 40A
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- JESD-609 Code :
- e3
- Width :
- 6.22mm
- Operating Mode :
- ENHANCEMENT MODE
- Fall Time (Typ) :
- 4 ns
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 20 ns
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 2
- Pbfree Code :
- yes
- Weight :
- 260.37mg
- Drain Current-Max (Abs) (ID) :
- 8A
- Power Dissipation :
- 3.1W
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Datasheets
- FDD86250
FDD86250 Documents

N-Channel Tape & Reel (TR) 22m Ω @ 8A, 10V ±20V 2110pF @ 75V 33nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD86250 Description
FDD86250 is a 150V N-Channel Shielded Gate PowerTrench? MOSFET. The onsemi FDD86250 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDD86250 is in the DPAK-3 package with 132W power dissipation.
FDD86250 Features
-
Shielded Gate MOSFET Technology
-
Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 8 A
-
Max rDS(on) = 31 mΩ at VGS = 6 V, ID = 6.5 A
-
100% UIL tested
-
RoHS Compliant
FDD86250 Applications
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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