FDD86113LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Lead Free :

Lead Free

Turn On Delay Time :

3.6 ns

Number of Elements :

1

Length :

6.73mm

Fall Time (Typ) :

1.6 ns

Width :

6.22mm

Factory Lead Time :

4 Weeks

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

9.7 ns

Continuous Drain Current (ID) :

4.2A

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Power Dissipation :

3.1W

Rds On (Max) @ Id, Vgs :

104m Ω @ 4.2A, 10V

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

285pF @ 50V

Published :

2006

Series :

PowerTrench®

Weight :

260.37mg

Number of Terminations :

2

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

1.3ns

Radiation Hardening :

No

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

100V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

5.5A

FET Type :

N-Channel

Height :

2.39mm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.1W Ta 29W Tc

Element Configuration :

Single

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

4.2A Ta 5.5A Tc

Mount :

Surface Mount

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V