FDD86110

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

12 ns

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

3.9 ns

JESD-30 Code :

R-PSSO-G2

Series :

PowerTrench®

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

12.5A Ta 50A Tc

Pbfree Code :

yes

Element Configuration :

Single

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Mount :

Surface Mount

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Drain to Source Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

5.4ns

Radiation Hardening :

No

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

60A

Length :

6.73mm

Vgs (Max) :

±20V

Nominal Vgs :

2.8 V

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

10.2m Ω @ 12.5A, 10V

Mounting Type :

Surface Mount

Weight :

260.37mg

Power Dissipation-Max :

3.1W Ta 127W Tc

Drain Current-Max (Abs) (ID) :

50A

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

19 ns

Width :

6.22mm

Continuous Drain Current (ID) :

12.5A

Power Dissipation :

3.1W

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2265pF @ 50V

Height :

2.39mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Threshold Voltage :

2.8V