FDD86102LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

260.37mg

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Pulsed Drain Current-Max (IDM) :

40A

Length :

6.73mm

ECCN Code :

EAR99

Height :

2.39mm

Current - Continuous Drain (Id) @ 25°C :

8A Ta 35A Tc

Turn-Off Delay Time :

20 ns

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

Number of Pins :

3

Mount :

Surface Mount

Power Dissipation :

54W

Transistor Element Material :

SILICON

Series :

PowerTrench®

Mounting Type :

Surface Mount

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

84 mJ

Drain-source On Resistance-Max :

0.0225Ohm

RoHS Status :

ROHS3 Compliant

Rise Time :

2.3ns

Input Capacitance (Ciss) (Max) @ Vds :

1540pF @ 50V

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

1.5V

Published :

2006

Vgs (Max) :

±20V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn On Delay Time :

6.6 ns

Pbfree Code :

yes

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

8A

Nominal Vgs :

1.5 V

Fall Time (Typ) :

2.3 ns

JESD-609 Code :

e3

Power Dissipation-Max :

3.1W Ta 54W Tc

Number of Terminations :

2

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

8A

Rds On (Max) @ Id, Vgs :

22.5m Ω @ 8A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

100V

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V