FDD86102

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

8A Ta 36A Tc

JESD-609 Code :

e3

Width :

6.22mm

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

8A

Packaging :

Tape and Reel (TR)

Threshold Voltage :

3.1V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Continuous Drain Current (ID) :

36A

Lead Free :

Lead Free

Height :

2.39mm

REACH SVHC :

No SVHC

Number of Terminations :

2

FET Type :

N-Channel

Factory Lead Time :

8 Weeks

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Element Configuration :

Single

Rise Time :

3ns

Number of Pins :

3

Weight :

260.37mg

Turn-Off Delay Time :

13.4 ns

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Power Dissipation :

3.1W

Transistor Application :

SWITCHING

Pbfree Code :

yes

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Fall Time (Typ) :

2.9 ns

Input Capacitance (Ciss) (Max) @ Vds :

1035pF @ 50V

Power Dissipation-Max :

3.1W Ta 62W Tc

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

24m Ω @ 8A, 10V

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

40A

Length :

6.73mm

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

7.6 ns

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.024Ohm

Published :

2006

Drain to Source Breakdown Voltage :

100V

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)