FDD850N10LD

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

75m Ω @ 12A, 10V

Gate Charge (Qg) (Max) @ Vgs :

28.9nC @ 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Packaging :

Tape and Reel (TR)

Published :

2013

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

41 mJ

Power Dissipation-Max :

42W Tc

Vgs (Max) :

±20V

Continuous Drain Current (ID) :

15.3A

Fall Time (Typ) :

8 ns

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Rise Time :

21ns

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Width :

6.22mm

HTS Code :

8541.29.00.95

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-5, DPak (4 Leads + Tab), TO-252AD

Turn-Off Delay Time :

27 ns

Input Capacitance (Ciss) (Max) @ Vds :

1465pF @ 25V

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Weight :

260.37mg

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

17 ns

Current - Continuous Drain (Id) @ 25°C :

15.3A Tc

Height :

2.39mm

JESD-30 Code :

R-PSSO-G4

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.096Ohm

Case Connection :

DRAIN

FET Type :

N-Channel

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

46A

Length :

6.73mm

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Terminations :

4

Series :

PowerTrench®

Element Configuration :

Single