FDD8453LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

6.7mOhm

Turn-Off Delay Time :

37 ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

40V

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

50A

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Height :

2.39mm

Vgs (Max) :

±20V

Factory Lead Time :

8 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

3515pF @ 20V

Number of Terminations :

2

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Published :

2006

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Rise Time :

6ns

Fall Time (Typ) :

5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

6.73mm

Pbfree Code :

yes

Series :

PowerTrench®

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 15A, 10V

Transistor Element Material :

SILICON

Weight :

260.37mg

Continuous Drain Current (ID) :

16.4A

Width :

6.22mm

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 10V

Mount :

Surface Mount

Element Configuration :

Single

JEDEC-95 Code :

TO-252AA

Current - Continuous Drain (Id) @ 25°C :

16.4A Ta 50A Tc

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

3.1W Ta 65W Tc

Turn On Delay Time :

11 ns

Number of Pins :

3

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation :

3.1W

JESD-30 Code :

R-PSSO-G2

Base Part Number :

FDD8453