FDD7N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

9 ns

Vgs (Max) :

±30V

Power Dissipation-Max :

43W Tc

Drain to Source Breakdown Voltage :

200V

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

JEDEC-95 Code :

TO-252AA

Power Dissipation :

43W

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Terminal Form :

Gull wing

Resistance :

690mOhm

Fall Time (Typ) :

10 ns

FET Type :

N-Channel

Length :

6.73mm

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

5A

Width :

6.22mm

Weight :

260.37mg

RoHS Status :

ROHS3 Compliant

Height :

2.39mm

Operating Temperature :

-55°C~150°C TJ

Rise Time :

30ns

REACH SVHC :

No SVHC

Pbfree Code :

yes

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

5V

Turn-Off Delay Time :

13 ns

Transistor Application :

SWITCHING

Published :

2004

Avalanche Energy Rating (Eas) :

62.5 mJ

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

2

Continuous Drain Current (ID) :

5A

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

4 Weeks

Radiation Hardening :

No

Number of Pins :

3

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Mount :

Surface Mount

Series :

UniFET™

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

JESD-609 Code :

e3