FDD7N20TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.39mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Terminations :

2

ECCN Code :

EAR99

Series :

UniFET™

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

43W

Rds On (Max) @ Id, Vgs :

690m Ω @ 2.5A, 10V

Factory Lead Time :

4 Weeks

Published :

2004

Turn-Off Delay Time :

13 ns

Width :

6.22mm

Number of Elements :

1

Threshold Voltage :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

5A

Weight :

260.37mg

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

5A

Radiation Hardening :

No

Resistance :

690mOhm

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate to Source Voltage (Vgs) :

30V

Transistor Element Material :

SILICON

Length :

6.73mm

Power Dissipation-Max :

43W Tc

Turn On Delay Time :

9 ns

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Rise Time :

30ns

Fall Time (Typ) :

10 ns

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

REACH SVHC :

No SVHC

Number of Pins :

3

Contact Plating :

Tin

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Avalanche Energy Rating (Eas) :

62.5 mJ

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE