FDD770N15A
- Mfr.Part #
- FDD770N15A
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N CH 150V 18A DPAK
- Stock
- 17,150
- In Stock :
- 17,150
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 56.8W
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 77m Ω @ 12A, 10V
- JEDEC-95 Code :
- TO-252AA
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.077Ohm
- Height :
- 2.39mm
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 150V
- Case Connection :
- DRAIN
- Factory Lead Time :
- 8 Weeks
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 15.8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- JESD-30 Code :
- R-PSSO-G2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Continuous Drain Current (ID) :
- 18A
- Published :
- 2017
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Weight :
- 260.37mg
- Terminal Form :
- Gull wing
- Length :
- 6.73mm
- Series :
- PowerTrench®
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 10.3 ns
- Element Configuration :
- Single
- Power Dissipation-Max :
- 56.8W Tc
- Number of Pins :
- 3
- Fall Time (Typ) :
- 2.8 ns
- Rise Time :
- 3.1ns
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 765pF @ 75V
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Width :
- 6.22mm
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Datasheets
- FDD770N15A

N-Channel Tape & Reel (TR) 77m Ω @ 12A, 10V ±20V 765pF @ 75V 11nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FDD770N15A Description
FDD770N15A is a 150v N-Channel PowerTrench? MOSFET. The N-Channel MOSFET FDD770N15A is produced using an advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDD770N15A is in the DPAK-3 package with 56.8W power dissipation.
FDD770N15A Features
-
RDS(on) = 61mΩ (Typ.) @ VGS = 10V, ID = 12A
-
Fast Switching Speed
-
Low Gate Charge
-
High-Performance Trench Technology for Extremely Low RDS(on)
-
High Power and Current Handling Capability
-
RoHS Compliant
FDD770N15A Applications
-
DC to DC Converters
-
Synchronous Rectification for Server Telecom PSU
-
Battery Charger
-
AC motor drives and Uninterruptible Power Supplies
-
Off-line UPS
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