FDD044AN03L

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Mfr.Part #
FDD044AN03L
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 30V 21A/35A TO252AA
Stock
8,676
In Stock :
8,676

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
3.9m Ω @ 35A, 10V
Series :
PowerTrench®
Drain-source On Resistance-Max :
0.0044Ohm
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max :
160W Tc
Number of Terminations :
2
Operating Temperature :
-55°C~175°C TJ
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Mounting Type :
Surface Mount
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount :
yes
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Reach Compliance Code :
Unknown
Input Capacitance (Ciss) (Max) @ Vds :
5.16pF @ 15V
Pbfree Code :
yes
Case Connection :
DRAIN
JESD-609 Code :
e3
Terminal Finish :
MATTE TIN
Terminal Form :
Gull wing
Gate Charge (Qg) (Max) @ Vgs :
118nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Terminal Position :
Single
Drain Current-Max (Abs) (ID) :
21A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
30V
FET Type :
N-Channel
Vgs (Max) :
±20V
Qualification Status :
COMMERCIAL
DS Breakdown Voltage-Min :
30V
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
21A Ta 35A Tc
Peak Reflow Temperature (Cel) :
260
RoHS Status :
ROHS3 Compliant
Number of Elements :
1
Avalanche Energy Rating (Eas) :
690 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Datasheets
FDD044AN03L
Introducing Transistors - FETs, MOSFETs - Single onsemi FDD044AN03L from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, FDD044AN03L pinout, FDD044AN03L datasheet PDF, FDD044AN03L amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDD044AN03L ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDD044AN03L


N-Channel Tape & Reel (TR) 3.9m Ω @ 35A, 10V ±20V 5.16pF @ 15V 118nC @ 10V 30V TO-252-3, DPak (2 Leads + Tab), SC-63

FDD044AN03L Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 690 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5.16pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 21A.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

FDD044AN03L Features


the avalanche energy rating (Eas) is 690 mJ
a 30V drain to source voltage (Vdss)


FDD044AN03L Applications


There are a lot of Rochester Electronics, LLC
FDD044AN03L applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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