FDC3535

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

-80V

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

80V

Number of Terminations :

6

Power Dissipation :

1.6W

Turn-Off Delay Time :

23 ns

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Width :

1.7mm

Continuous Drain Current (ID) :

-2.1A

Turn On Delay Time :

6.5 ns

Nominal Vgs :

-1.6 V

Published :

2017

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Terminal Finish :

Tin

Feedback Cap-Max (Crss) :

40 pF

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

6

Weight :

36mg

JESD-609 Code :

e3

Lead Free :

Lead Free

Terminal Form :

Gull wing

Terminal Position :

Dual

Rise Time :

3.1ns

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Rds On (Max) @ Id, Vgs :

183m Ω @ 2.1A, 10V

Number of Channels :

1

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation-Max :

1.6W Ta

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Height :

1.1mm

Series :

PowerTrench®

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Fall Time (Typ) :

2.9 ns

Threshold Voltage :

-1.6V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs (Max) :

±20V

FET Type :

P-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

880pF @ 40V

Max Junction Temperature (Tj) :

150°C

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Length :

3mm