FDC3512

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Mfr.Part #
FDC3512
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 80V 3A SUPERSOT6
Stock
14,366
In Stock :
14,366

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
3A
Terminal Position :
Dual
Weight :
36mg
Turn On Delay Time :
7 ns
Power Dissipation :
1.6W
Contact Plating :
Tin
Mounting Type :
Surface Mount
Number of Terminations :
6
Input Capacitance (Ciss) (Max) @ Vds :
634pF @ 40V
Current Rating :
3A
Vgs (Max) :
±20V
Radiation Hardening :
No
Operating Temperature :
-55°C~150°C TJ
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Number of Pins :
6
Element Configuration :
Single
Terminal Form :
Gull wing
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Drain Current-Max (Abs) (ID) :
3A
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
1.6W Ta
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
3A Ta
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
77m Ω @ 3A, 10V
Rise Time :
3ns
Resistance :
77mOhm
Height :
1mm
Published :
2002
FET Type :
N-Channel
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Operating Mode :
ENHANCEMENT MODE
Width :
1.7mm
Length :
3mm
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
Fall Time (Typ) :
3 ns
Mount :
Surface Mount
JESD-609 Code :
e3
Pbfree Code :
yes
Turn-Off Delay Time :
24 ns
Series :
PowerTrench®
REACH SVHC :
No SVHC
Gate to Source Voltage (Vgs) :
20V
Factory Lead Time :
5 Weeks
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Voltage - Rated DC :
80V
HTS Code :
8541.29.00.95
Threshold Voltage :
2.4V
ECCN Code :
EAR99
Nominal Vgs :
2.4 V
Drain to Source Breakdown Voltage :
80V
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC3512 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, FDC3512 pinout, FDC3512 datasheet PDF, FDC3512 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC3512 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC3512


N-Channel Tape & Reel (TR) 77m Ω @ 3A, 10V ±20V 634pF @ 40V 18nC @ 10V SOT-23-6 Thin, TSOT-23-6

FDC3512 Description

The FDC3512 is a PowerTrench MOSFET with an 80V N-Channel. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Low gate charge, low RDS(ON), and quick switching speed have all been tuned.

FDC3512 Features

? Fast switching speed
? Low gate charge (13nC typ)
? High power and current handling capability
? 3.0 A, 80 V RDS(ON) = 77 m? @ VGS = 10 V RDS(ON) = 88 m? @ VGS = 6 V
? High performance trench technology for extremely low RDS(ON)

FDC3512 Applications

? Industrial
? DC/DC converter
? Power management
? Fast switching speed
? High performance trench technology for extremely low RDS(ON)
? Low gate charge (13nC typ) High power and current handling capability
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