FDB8896

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Mfr.Part #
FDB8896
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 19A/93A TO263AB
Stock
4,442
In Stock :
4,442

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Resistance :
5.7mOhm
Rise Time :
102ns
Current - Continuous Drain (Id) @ 25°C :
19A Ta 93A Tc
Turn-Off Delay Time :
58 ns
Pbfree Code :
yes
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Height :
1mm
Factory Lead Time :
10 Weeks
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e3
Drain Current-Max (Abs) (ID) :
80A
Case Connection :
DRAIN
Width :
1.7mm
Number of Elements :
1
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
REACH SVHC :
No SVHC
Operating Temperature :
-55°C~175°C TJ
Mount :
Surface Mount
Terminal Form :
Gull wing
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
67nC @ 10V
Avalanche Energy Rating (Eas) :
74 mJ
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
93A
Published :
2004
Input Capacitance (Ciss) (Max) @ Vds :
2525pF @ 15V
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
44 ns
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Series :
PowerTrench®
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Power Dissipation-Max :
80W Tc
Current Rating :
93A
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Contact Plating :
Tin
Transistor Element Material :
SILICON
Length :
3mm
Number of Pins :
3
Reach Compliance Code :
not_compliant
JESD-30 Code :
R-PSSO-G2
Threshold Voltage :
2.5V
Power Dissipation :
80W
Drain to Source Breakdown Voltage :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Rds On (Max) @ Id, Vgs :
5.7m Ω @ 35A, 10V
Mounting Type :
Surface Mount
Turn On Delay Time :
9 ns
Voltage - Rated DC :
30V
Number of Terminations :
2
Transistor Application :
SWITCHING
Weight :
1.31247g
Lead Free :
Lead Free
Qualification Status :
Not Qualified
Vgs (Max) :
±20V
Datasheets
FDB8896
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB8896 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, Number of Terminations:2, FDB8896 pinout, FDB8896 datasheet PDF, FDB8896 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB8896 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB8896


N-Channel Tape & Reel (TR) 5.7m Ω @ 35A, 10V ±20V 2525pF @ 15V 67nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB8896 Description


The FDB8896 N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Low gate charge, low rDS(ON), and quick switching speed have all been tuned.



FDB8896 Features


  • Low gate charge

  • rDS(ON) = 5.7mΩ @ VGS = 10V, ID=35A

  • rDS(ON) = 6.8mΩ @ VGS = 4.5V, ID=35A

  • High power and current handling capability

  • High-performance trench technology for extremely low rDS(ON)



FDB8896 Applications


  • DC/DC converters


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