FDB8443

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

9310pF @ 25V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

188W Tc

Power Dissipation :

188W

Turn On Delay Time :

18.4 ns

Number of Elements :

1

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

25A

Drain to Source Breakdown Voltage :

40V

Weight :

1.31247g

Mounting Type :

Surface Mount

Factory Lead Time :

8 Weeks

Mount :

Surface Mount

Series :

PowerTrench®

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

25A Ta 120A Tc

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Turn-Off Delay Time :

55 ns

Fall Time (Typ) :

13.5 ns

Qualification Status :

Not Qualified

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Terminations :

2

Case Connection :

DRAIN

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

80A

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Form :

Gull wing

Rise Time :

17.9ns