FDB8443

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

55 ns

Input Capacitance (Ciss) (Max) @ Vds :

9310pF @ 25V

JESD-609 Code :

e3

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

40V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

188W Tc

Rise Time :

17.9ns

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

25A Ta 120A Tc

Power Dissipation :

188W

Drain Current-Max (Abs) (ID) :

80A

Transistor Application :

SWITCHING

Number of Pins :

3

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Weight :

1.31247g

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Operating Temperature :

-55°C~175°C TJ

Fall Time (Typ) :

13.5 ns

Turn On Delay Time :

18.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

25A

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Reach Compliance Code :

not_compliant

Number of Terminations :

2

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

185nC @ 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

DRAIN