FDB8880

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Mfr.Part #
FDB8880
Manufacturer
onsemi
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 11A/54A TO263AB
Stock
33,131
In Stock :
33,131

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Continuous Drain Current (ID) :
54A
Weight :
1.31247g
Transistor Application :
SWITCHING
Drain to Source Breakdown Voltage :
30V
Published :
2005
Element Configuration :
Single
Case Connection :
DRAIN
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Rds On (Max) @ Id, Vgs :
11.6m Ω @ 40A, 10V
Voltage - Rated DC :
30V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pbfree Code :
yes
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Threshold Voltage :
2.5V
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs(th) (Max) @ Id :
2.5V @ 250μA
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max) :
±20V
JESD-30 Code :
R-PSSO-G2
Power Dissipation-Max :
55W Tc
Mount :
Surface Mount
Power Dissipation :
55W
RoHS Status :
RoHS Compliant
Radiation Hardening :
No
Number of Terminations :
2
FET Type :
N-Channel
Series :
PowerTrench®
Mounting Type :
Surface Mount
Rise Time :
107ns
Gate to Source Voltage (Vgs) :
20V
Turn-Off Delay Time :
47 ns
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~175°C TJ
Current - Continuous Drain (Id) @ 25°C :
11A Ta 54A Tc
Fall Time (Typ) :
51 ns
Terminal Form :
Gull wing
Nominal Vgs :
2.5 V
Number of Pins :
3
Lead Free :
Lead Free
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
1240pF @ 15V
Turn On Delay Time :
8 ns
Length :
10.67mm
Width :
11.33mm
REACH SVHC :
No SVHC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Height :
4.83mm
Current Rating :
54A
Introducing Transistors - FETs, MOSFETs - Single onsemi FDB8880 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, FDB8880 pinout, FDB8880 datasheet PDF, FDB8880 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDB8880 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDB8880


N-Channel Tape & Reel (TR) 11.6m Ω @ 40A, 10V ±20V 1240pF @ 15V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FDB8880 Description


The FDB8880 is a PowerTrench? N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The MOSFET FDB8880 has been optimized for low gate charge, low RDS (ON), and fast switching speed.



FDB8880 Features


  • rDS(ON) = 14.5m|?, VGS = 4.5V, VD = 40V

  • rDS(ON) = 11.6m|?, VGS = 10V, VD = 40V

  • High-performance trench technology for extremely low rDS(ON)

  • Low gate charge

  • High power and current handling capability

  • RoHS Compliant



FDB8880 Applications


  • Cellular phones 

  • Laptop computers

  • Photovoltaic systems 

  • Wind turbines

  • Shunt voltage regulator and the series voltage regulator


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