FDB8880
- Mfr.Part #
- FDB8880
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- 11A, 30V, 0.0145OHM, N-CHANNEL,
- Stock
- 33,131
- In Stock :
- 33,131
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 2.5V
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 11.6m Ω @ 40A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 54A Tc
- Height :
- 4.83mm
- Terminal Finish :
- Tin (Sn)
- Voltage - Rated DC :
- 30V
- Current Rating :
- 54A
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 29nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 3
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 1240pF @ 15V
- Lead Free :
- Lead Free
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Turn On Delay Time :
- 8 ns
- Nominal Vgs :
- 2.5 V
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2005
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- Power Dissipation-Max :
- 55W Tc
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 51 ns
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 55W
- Weight :
- 1.31247g
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 54A
- Drain to Source Breakdown Voltage :
- 30V
- Rise Time :
- 107ns
- Length :
- 10.67mm
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Width :
- 11.33mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 47 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Datasheets
- FDB8880

N-Channel Tape & Reel (TR) 11.6m Ω @ 40A, 10V ±20V 1240pF @ 15V 29nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FDB8880 Description
The FDB8880 is a PowerTrench? N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. The MOSFET FDB8880 has been optimized for low gate charge, low RDS (ON), and fast switching speed.
FDB8880 Features
-
rDS(ON) = 14.5m|?, VGS = 4.5V, VD = 40V
-
rDS(ON) = 11.6m|?, VGS = 10V, VD = 40V
-
High-performance trench technology for extremely low rDS(ON)
-
Low gate charge
-
High power and current handling capability
-
RoHS Compliant
FDB8880 Applications
-
Cellular phones
-
Laptop computers
-
Photovoltaic systems
-
Wind turbines
-
Shunt voltage regulator and the series voltage regulator
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