FDB8878

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

30V

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

14m Ω @ 40A, 10V

Drain-source On Resistance-Max :

0.014Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1.235pF @ 15V

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

48A

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

60 mJ

Pulsed Drain Current-Max (IDM) :

170A

Terminal Finish :

MATTE TIN

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Pin Count :

3

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Power Dissipation-Max :

47.3W Tc

Case Connection :

DRAIN

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2