FDB8870

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Factory Lead Time :

10 Weeks

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

160W

JESD-609 Code :

e3

Radiation Hardening :

No

Fall Time (Typ) :

47 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

23A Ta 160A Tc

Drain-source On Resistance-Max :

0.0044Ohm

Lead Free :

Lead Free

Weight :

1.31247g

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 35A, 10V

ECCN Code :

EAR99

Turn-Off Delay Time :

75 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Turn On Delay Time :

10 ns

Power Dissipation-Max :

160W Tc

Number of Pins :

3

Pbfree Code :

yes

Number of Terminations :

2

Rise Time :

98ns

RoHS Status :

ROHS3 Compliant

Current Rating :

160A

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

30V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

132nC @ 10V

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

35A

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

30V

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V