FDB8870

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current Rating :

160A

Voltage - Rated DC :

30V

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 15V

Packaging :

Tape and Reel (TR)

Rise Time :

98ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

47 ns

ECCN Code :

EAR99

Lead Free :

Lead Free

Turn-Off Delay Time :

75 ns

Pbfree Code :

yes

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Series :

PowerTrench®

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

132nC @ 10V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Power Dissipation :

160W

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 35A, 10V

Factory Lead Time :

10 Weeks

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Finish :

Tin (Sn)

Drain-source On Resistance-Max :

0.0044Ohm

Number of Terminations :

2

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

35A

Number of Pins :

3

Power Dissipation-Max :

160W Tc

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Breakdown Voltage :

30V

Weight :

1.31247g

Element Configuration :

Single

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

23A Ta 160A Tc