FDB8832

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Number of Elements :

1

Published :

2006

REACH SVHC :

No SVHC

Pbfree Code :

yes

Dual Supply Voltage :

30V

Turn-Off Delay Time :

54 ns

Transistor Application :

SWITCHING

Power Dissipation :

300W

JESD-609 Code :

e3

Lead Free :

Lead Free

Factory Lead Time :

10 Weeks

Weight :

1.31247g

Width :

11.33mm

Current - Continuous Drain (Id) @ 25°C :

34A Ta 80A Tc

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 15V

Turn On Delay Time :

24 ns

Drain Current-Max (Abs) (ID) :

34A

Threshold Voltage :

1.6V

Termination :

SMD/SMT

Length :

10.67mm

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

30V

Reverse Recovery Time :

59 ns

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1.9m Ω @ 80A, 10V

Nominal Vgs :

1.6 V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

80A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

265nC @ 10V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Power Dissipation-Max :

300W Tc

Rise Time :

73ns

Element Configuration :

Single

Number of Terminations :

2

FET Type :

N-Channel

Mount :

Surface Mount

Mounting Type :

Surface Mount

Fall Time (Typ) :

38 ns

Number of Pins :

2

Height :

4.83mm