FDB86135

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Published :

2017

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

Turn-Off Delay Time :

37 ns

Fall Time (Typ) :

11 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

54ns

Length :

10.67mm

Pbfree Code :

yes

Terminal Form :

Gull wing

HTS Code :

8541.29.00.95

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

704A

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

658 mJ

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Weight :

1.31247g

Threshold Voltage :

2V

Height :

4.83mm

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Power Dissipation-Max :

2.4W Ta 227W Tc

Number of Terminations :

2

Series :

PowerTrench®

Continuous Drain Current (ID) :

75A

Additional Feature :

ULTRA LOW-ON RESISTANCE

Power Dissipation :

227W

Turn On Delay Time :

22 ns

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 75A, 10V

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Drain Current-Max (Abs) (ID) :

120A

Case Connection :

DRAIN

JESD-609 Code :

e3

Width :

9.65mm