FDB86135

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

116nC @ 10V

Pulsed Drain Current-Max (IDM) :

704A

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 75A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

11 ns

Continuous Drain Current (ID) :

75A

Rise Time :

54ns

Radiation Hardening :

No

Vgs (Max) :

±20V

Mount :

Surface Mount

Weight :

1.31247g

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Width :

9.65mm

Additional Feature :

ULTRA LOW-ON RESISTANCE

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Height :

4.83mm

Element Configuration :

Single

Length :

10.67mm

Case Connection :

DRAIN

Threshold Voltage :

2V

Drain Current-Max (Abs) (ID) :

120A

Input Capacitance (Ciss) (Max) @ Vds :

7295pF @ 25V

HTS Code :

8541.29.00.95

Published :

2017

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation :

227W

Peak Reflow Temperature (Cel) :

245

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Elements :

1

REACH SVHC :

No SVHC

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

2.4W Ta 227W Tc

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

658 mJ

Terminal Finish :

Tin (Sn)

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

37 ns

Series :

PowerTrench®

FET Type :

N-Channel

Turn On Delay Time :

22 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30