FDB86102LZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Number of Terminations :

2

Drain-source On Resistance-Max :

0.024Ohm

Radiation Hardening :

No

Fall Time (Typ) :

2.3 ns

Vgs (Max) :

±20V

Threshold Voltage :

1.5V

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Rds On (Max) @ Id, Vgs :

24m Ω @ 8.3A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

18.2 ns

Lead Free :

Lead Free

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

REACH SVHC :

No SVHC

Factory Lead Time :

8 Weeks

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta 30A Tc

FET Type :

N-Channel

Rise Time :

2.1ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

30A

Width :

11.33mm

Series :

PowerTrench®

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1275pF @ 50V

Nominal Vgs :

1.5 V

Vgs(th) (Max) @ Id :

3V @ 250µA

Pulsed Drain Current-Max (IDM) :

50A

Terminal Form :

Gull wing

Weight :

1.31247g

Height :

4.83mm

Published :

2011

Drain to Source Breakdown Voltage :

100V

Case Connection :

DRAIN

Power Dissipation-Max :

3.1W Ta

Turn On Delay Time :

6.6 ns

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Power Dissipation :

3.1W