FDB8447L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 14A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 10V

Fall Time (Typ) :

4 ns

Published :

2006

Continuous Drain Current (ID) :

50A

Dual Supply Voltage :

40V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Height :

4.83mm

REACH SVHC :

No SVHC

Factory Lead Time :

8 Weeks

Threshold Voltage :

1.9V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

15A Ta 50A Tc

Turn-Off Delay Time :

28 ns

Weight :

1.31247g

Drain to Source Breakdown Voltage :

40V

Width :

11.33mm

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

2

Rise Time :

6ns

Packaging :

Tape and Reel (TR)

Resistance :

8.5mOhm

Input Capacitance (Ciss) (Max) @ Vds :

2620pF @ 20V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Number of Elements :

1

Turn On Delay Time :

11 ns

Termination :

SMD/SMT

Number of Terminations :

2

Power Dissipation :

60W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pbfree Code :

yes

Length :

10.67mm

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.9 V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Power Dissipation-Max :

3.1W Ta 60W Tc