FDB8444

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

15 ns

Lead Free :

Lead Free

Radiation Hardening :

No

FET Type :

N-Channel

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

8035pF @ 25V

Resistance :

5.5mOhm

JESD-609 Code :

e3

Factory Lead Time :

8 Weeks

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Turn On Delay Time :

12 ns

Avalanche Energy Rating (Eas) :

307 mJ

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

128nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Rise Time :

78ns

Weight :

1.31247g

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

48 ns

Series :

PowerTrench®

Transistor Element Material :

SILICON

Number of Terminations :

2

Power Dissipation :

167W

Power Dissipation-Max :

167W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Rds On (Max) @ Id, Vgs :

5.5m Ω @ 70A, 10V

Continuous Drain Current (ID) :

70A