FD1200R17KE3KNOSA1

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Mfr.Part #
FD1200R17KE3KNOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1700V 1600A 5950W
Stock
1
In Stock :
1

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Polarity/Channel Type :
N-Channel
Operating Temperature :
-40°C~125°C
ECCN Code :
EAR99
Input :
Standard
Turn On Time :
1050 ns
Halogen Free :
Not Halogen Free
Configuration :
Dual Brake Chopper
NTC Thermistor :
No
JESD-30 Code :
R-XUFM-X7
Case Connection :
Isolated
Current - Collector Cutoff (Max) :
5mA
Lead Free :
Contains Lead
Mounting Type :
Chassis Mount
Turn Off Time-Nom (toff) :
2100 ns
Published :
2002
Package / Case :
Module
Collector Emitter Voltage (VCEO) :
1.7kV
Vce(on) (Max) @ Vge, Ic :
2.45V @ 15V, 1200A
Terminal Position :
UPPER
RoHS Status :
Non-RoHS Compliant
Mount :
Screw
Number of Terminations :
7
Voltage - Collector Emitter Breakdown (Max) :
1700V
Max Collector Current :
1.6kA
Terminal Form :
UNSPECIFIED
Current - Collector (Ic) (Max) :
1600A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Cies) @ Vce :
110nF @ 25V
Transistor Element Material :
SILICON
Power - Max :
5950W
Number of Pins :
130
Number of Elements :
1
Introducing Transistors - IGBTs - Modules Infineon Technologies FD1200R17KE3KNOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~125°C, Mounting Type:Chassis Mount, Package / Case:Module, Number of Terminations:7, Number of Pins:130, FD1200R17KE3KNOSA1 pinout, FD1200R17KE3KNOSA1 datasheet PDF, FD1200R17KE3KNOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FD1200R17KE3KNOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



FD1200R17KE3KNOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FD1200R17KE3KNOSA1 Description


FD1200R17KE3KNOSA1 is a 1700v IGBT. The transistor FD1200R17KE3KNOSA1 can be applied in Automotive,  Body electronics & lighting, Communications equipment, Datacom module, Personal electronics, and Connected peripherals & printers applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FD1200R17KE3KNOSA1 is in the tray package with 5kW Power dissipation.



FD1200R17KE3KNOSA1 Features


Collector-emitter voltage Tvj = 25°C: 1700v

Continuous DC collector current TC = 25°C, Tvj max = 150°C: 1600A

Gate-emitter peak voltage: +/-20 V

The temperature under switching conditions Tvj op:  -40 to 125 °C

Continuous DC forward current: 1200A



FD1200R17KE3KNOSA1 Applications


Automotive 

Body electronics & lighting 

Communications equipment 

Datacom module 

Personal electronics 

Connected peripherals & printers 


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