FD1200R17HP4-K_B2

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Mfr.Part #
FD1200R17HP4-K_B2
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
FD1200R17 - IGBT MODULE
Stock
36
In Stock :
36

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Reach Compliance Code :
not_compliant
Mount :
Screw
Halogen Free :
Not Halogen Free
Lead Free :
Contains Lead
Number of Pins :
7
Collector Emitter Voltage (VCEO) :
1.7kV
Pbfree Code :
yes
Factory Lead Time :
18 Weeks
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
Module
Published :
2002
Datasheets
FD1200R17HP4-K_B2
Introducing Transistors - IGBTs - Modules Infineon Technologies FD1200R17HP4-K_B2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:7, Package / Case:Module, FD1200R17HP4-K_B2 pinout, FD1200R17HP4-K_B2 datasheet PDF, FD1200R17HP4-K_B2 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FD1200R17HP4-K_B2 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



FD1200R17HP4KB2BOSA2 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FD1200R17HP4KB2BOSA2                         Description


IGBT (Insulated Gate Bipolar Transistor) module is a device required for inverter use in many types of industrial equipment, and had driven the trend towards high currents and high voltage since 1990.

 

FD1200R17HP4KB2BOSA2                       Applications

· Chopper applications

· High power converters

· Traction drives

· Wind turbines

 

FD1200R17HP4KB2BOSA2                      Features

· Extended operating temperature Tvjop

· Low VCEsat

 

Mechanical Features

· 4kV AC 1min insulation

· AlSiC base plate for increased thermal cycling capability

· Package with CTI>400

· High creepage and clearance distances

· High power and thermal cycling capability

· High power density

· IHM B housing


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