FCPF7N60NT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

35.6nC @ 10V

Vgs (Max) :

±30V

Series :

SupreMOS™

Threshold Voltage :

2V

Radiation Hardening :

No

Power Dissipation-Max :

30.5W Tc

Pulsed Drain Current-Max (IDM) :

20.4A

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Fall Time (Typ) :

12 ns

Turn On Delay Time :

12 ns

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Width :

4.9mm

Height :

16.07mm

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 100V

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Number of Elements :

1

Rise Time :

6ns

Rds On (Max) @ Id, Vgs :

520m Ω @ 3.4A, 10V

Case Connection :

Isolated

Drain to Source Breakdown Voltage :

600V

FET Type :

N-Channel

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

35 ns

Number of Terminations :

3

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

12 Weeks

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

6.8A Tc

Weight :

2.27g

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Continuous Drain Current (ID) :

6.8A

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

79.4 mJ

JEDEC-95 Code :

TO-220AB

Lead Free :

Lead Free

Power Dissipation :

30.5W

JESD-609 Code :

e3

Length :

10.36mm

Resistance :

600mOhm