FCPF11N60T
- Mfr.Part #
- FCPF11N60T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- 11A, 600V, 0.38OHM, N-CHANNEL,
- Stock
- 12
- In Stock :
- 12
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Fall Time (Typ) :
- 56 ns
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 36W
- Mount :
- Through Hole
- Current Rating :
- 11A
- Gate to Source Voltage (Vgs) :
- 30V
- Weight :
- 2.27g
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 600V
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 52nC @ 10V
- Voltage - Rated DC :
- 600V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 119 ns
- Continuous Drain Current (ID) :
- 11A
- Rise Time :
- 98ns
- Number of Terminations :
- 3
- Published :
- 2014
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 34 ns
- Case Connection :
- Isolated
- Power Dissipation-Max :
- 36W Tc
- Series :
- SuperFET™
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Number of Pins :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1490pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 380m Ω @ 5.5A, 10V
- Datasheets
- FCPF11N60T

N-Channel Tube 380m Ω @ 5.5A, 10V ±30V 1490pF @ 25V 52nC @ 10V TO-220-3 Full Pack
FCPF11N60T Description
FCPF11N60 is an N-channel SuperFET? high voltage super-junction MOSFET that uses charge balance technology to deliver outstanding low ON-resistance and low gate charge. The technology is designed to minimize conduction losses, provide superior switching performance, a high dV/dt rate, and higher avalanche energy. Consequently, SuperFET MOSFETs are well suited for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
FCPF11N60T Features
-
650V @Tj = 150??C
-
Typ. Rds(on)=0.32|?
-
100% avalanche tested
-
RoHS Compliant
-
Ultra low gate charge (typ. Qg=40nC)
-
Low effective output capacitance (typ. Coss.eff=95pF)
FCPF11N60T Applications
-
Industrial
-
Lighting
-
Power Management
-
Communications & Networking
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