FCPF650N80Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.07mm

Mount :

Through Hole

Rds On (Max) @ Id, Vgs :

650m Ω @ 4A, 10V

Fall Time (Typ) :

3.4 ns

Width :

4.9mm

FET Type :

N-Channel

Continuous Drain Current (ID) :

8A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Vgs(th) (Max) @ Id :

4.5V @ 800μA

Turn On Delay Time :

17 ns

Number of Channels :

1

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Turn-Off Delay Time :

40 ns

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Published :

2017

Factory Lead Time :

13 Weeks

Rise Time :

11ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

8A

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

30.5W Tc

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Drain to Source Voltage (Vdss) :

800V

Weight :

2.27g

Packaging :

Tube

Pbfree Code :

yes

Length :

10.36mm

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Series :

SuperFET® II

Package / Case :

TO-220-3 Full Pack

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

1565pF @ 100V

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V