FCPF36N60NT
- Mfr.Part #
- FCPF36N60NT
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 36A TO220F
- Stock
- 68,679
- In Stock :
- 68,679
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Series :
- SupreMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- Case Connection :
- Isolated
- Weight :
- 2.27g
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 4 ns
- Published :
- 2013
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 36A
- Width :
- 4.9mm
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 18A, 10V
- JESD-609 Code :
- e3
- Length :
- 10.36mm
- Package / Case :
- TO-220-3 Full Pack
- Number of Terminations :
- 3
- Height :
- 16.07mm
- Turn On Delay Time :
- 23 ns
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 30V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±30V
- Mounting Type :
- Through Hole
- Drain-source On Resistance-Max :
- 0.09Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Factory Lead Time :
- 12 Weeks
- Mount :
- Through Hole
- Rise Time :
- 22ns
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 94 ns
- Pbfree Code :
- yes
- Drain to Source Breakdown Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4785pF @ 100V
- ECCN Code :
- EAR99
- Datasheets
- FCPF36N60NT

N-Channel Tube 90m Ω @ 18A, 10V ±30V 4785pF @ 100V 112nC @ 10V TO-220-3 Full Pack
FCPF36N60NT Overview
The maximum input capacitance of this device is 4785pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=600V, and ID flows to VDS at 600VVDS, the drain-source breakdown voltage is 600V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 94 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 23 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
FCPF36N60NT Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 94 ns
FCPF36N60NT Applications
There are a lot of ON Semiconductor
FCPF36N60NT applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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