FCPF260N60E

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Mfr.Part #
FCPF260N60E
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N CH 600V 15A TO-220F
Stock
11,791
In Stock :
11,791

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
16 Weeks
Min Operating Temperature :
-55°C
Drain to Source Breakdown Voltage :
650V
Lead Free :
Lead Free
Terminal Finish :
Tin (Sn)
Gate to Source Voltage (Vgs) :
20V
Fall Time (Typ) :
13 ns
Continuous Drain Current (ID) :
15A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
11ns
Turn On Delay Time :
20 ns
Drain to Source Resistance :
260mOhm
Rds On Max :
260 mΩ
Threshold Voltage :
2.5V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Mount :
Through Hole
Reach Compliance Code :
not_compliant
Power Dissipation :
36W
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Width :
16.07mm
Polarity/Channel Type :
N-Channel
Drain to Source Voltage (Vdss) :
600V
Height :
4.9mm
Input Capacitance :
2.5nF
RoHS Status :
ROHS3 Compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Elements :
1
JESD-609 Code :
e3
Max Operating Temperature :
150°C
ECCN Code :
EAR99
Turn-Off Delay Time :
13 ns
Length :
10.36mm
Package / Case :
TO-220-3
Number of Pins :
3
Pbfree Code :
yes
Max Power Dissipation :
36W
Element Configuration :
Single
Weight :
2.27g
Packaging :
Tube
Datasheets
FCPF260N60E
Introducing Transistors - FETs, MOSFETs - Single onsemi FCPF260N60E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, FCPF260N60E pinout, FCPF260N60E datasheet PDF, FCPF260N60E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCPF260N60E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCPF260N60E


Tube 600V TO-220-3

FCPF260N60E Description


The FCPF260N60E is a charge-balanced N-channel SuperFET? II easy-drive high voltage super-junction MOSFET with remarkable low ON-resistance and low gate charge performance. This method is designed to reduce conduction loss, improve switching performance, increase dV/dt rate, and increase avalanche energy. As a result, SuperFET II MOSFETs are ideal for switching power applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power.



FCPF260N60E Features


  • Ultra low gate charge (Qg = 48nC)

  • Low effective output capacitance (Coss.eff = 129pF)

  • 100% avalanche tested



FCPF260N60E Applications


  • Industrial

  • Power Management

  • Communications & Networking

  • Lighting

  • Alternative Energy

  • Consumer Electronics


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