FCPF22N60NT

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

39W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.16mm

Resistance :

165mOhm

Case Connection :

Isolated

Qualification Status :

Not Qualified

Continuous Drain Current (ID) :

22A

Threshold Voltage :

3V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Turn-Off Delay Time :

49 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

15 Weeks

Rise Time :

16.7ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

165m Ω @ 11A, 10V

Lead Free :

Lead Free

Weight :

2.27g

Mounting Type :

Through Hole

Number of Pins :

3

Series :

SupreMOS™

Drain to Source Breakdown Voltage :

600V

Package / Case :

TO-220-3 Full Pack

Height :

15.9mm

Vgs (Max) :

±45V

Pulsed Drain Current-Max (IDM) :

66A

RoHS Status :

ROHS3 Compliant

Width :

4.7mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

22A Tc

Turn On Delay Time :

16.9 ns

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Fall Time (Typ) :

4 ns

Power Dissipation :

39W

Pbfree Code :

yes

Packaging :

Tube

Avalanche Energy Rating (Eas) :

672 mJ

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Published :

2013