FCPF20N60T

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

SuperFET™

Vgs (Max) :

±30V

Current Rating :

20A

Number of Pins :

3

Mount :

Through Hole

Voltage - Rated DC :

600V

Vgs(th) (Max) @ Id :

5V @ 250μA

Published :

2013

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

62 ns

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

190m Ω @ 10A, 10V

Weight :

2.27g

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Number of Terminations :

3

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

39W

JESD-609 Code :

e3

Radiation Hardening :

No

Avalanche Energy Rating (Eas) :

690 mJ

ECCN Code :

EAR99

Case Connection :

Isolated

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 1 week ago)

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Continuous Drain Current (ID) :

20A

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3080pF @ 25V

Turn-Off Delay Time :

230 ns

Drain to Source Breakdown Voltage :

600V

Fall Time (Typ) :

65 ns

Package / Case :

TO-220-3 Full Pack

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Rise Time :

140ns

Pulsed Drain Current-Max (IDM) :

60A

Packaging :

Tube

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

98nC @ 10V

Power Dissipation-Max :

39W Tc