FCPF190N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 10V

Package / Case :

TO-220-3 Full Pack

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Width :

4.9mm

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Weight :

2.27g

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

199m Ω @ 10A, 10V

Mount :

Through Hole

FET Type :

N-Channel

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Case Connection :

Isolated

Factory Lead Time :

12 Weeks

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Power Dissipation-Max :

39W Tc

Fall Time (Typ) :

5 ns

Turn On Delay Time :

20 ns

Length :

10.36mm

Power Dissipation :

39W

Height :

16.07mm

Packaging :

Tube

ECCN Code :

EAR99

Continuous Drain Current (ID) :

20.2A

Published :

2013

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

60.6A

Threshold Voltage :

2.5V

Transistor Application :

SWITCHING

Turn-Off Delay Time :

64 ns

Number of Terminations :

3

Series :

SuperFET® II

Avalanche Energy Rating (Eas) :

400 mJ

Rise Time :

10ns

Number of Elements :

1

Transistor Element Material :

SILICON

Element Configuration :

Single